Title :
The physical and numerical implications of the noise modeling method: IFM, CPM, and ERS
Author :
Nah, Hyunchul ; Hong, Sung-min ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this paper, several aspects of the numerical methods for the noise modeling are introduced such as the impedance field method, the characteristic potential method, and the extended Ramo-Shockley theorem and their implications are discussed. The challenges faced in the 1/f noise modeling of MOSFETs and suggestions for the direction of the noise modeling are also discussed.
Keywords :
1/f noise; MOSFET; semiconductor device models; semiconductor device noise; 1/f noise; MOSFET; characteristic potential method; extended Ramo-Shockley theorem; impedance field method; noise modeling; numerical methods; Circuit noise; Computer science; Fluctuations; Impedance; MOSFETs; Numerical models; Semiconductor device noise; Semiconductor devices; Semiconductor process modeling; Telephony;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233641
