DocumentCode
2095562
Title
Thermal noise modeling for short-channel MOSFETs
Author
Han, Kwangseok ; Lee, Kwyro ; Shin, Hyungcheol
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
79
Lastpage
82
Abstract
In this work, a physics-based MOSFET drain thermal noise current model valid for all channel lengths was presented for the first time. The derived model was verified by extensive experimental noise and charge measurement of devices with channel lengths down to 0.18 /spl mu/m. Excellent agreement between measured and modeled drain thermal noise was obtained for the entire V/sub GS/ and V/sub DS/ bias regions.
Keywords
MOSFET; semiconductor device models; semiconductor device noise; thermal noise; channel length modulation; drain thermal noise; inversion charge; short-channel MOSFET; thermal noise current model; velocity saturation; Charge measurement; Computer science; Electronic mail; Electrons; Impedance; MOSFETs; Noise generators; Noise measurement; Thermal engineering; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233642
Filename
1233642
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