Title :
Thermal noise modeling for short-channel MOSFETs
Author :
Han, Kwangseok ; Lee, Kwyro ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
In this work, a physics-based MOSFET drain thermal noise current model valid for all channel lengths was presented for the first time. The derived model was verified by extensive experimental noise and charge measurement of devices with channel lengths down to 0.18 /spl mu/m. Excellent agreement between measured and modeled drain thermal noise was obtained for the entire V/sub GS/ and V/sub DS/ bias regions.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; thermal noise; channel length modulation; drain thermal noise; inversion charge; short-channel MOSFET; thermal noise current model; velocity saturation; Charge measurement; Computer science; Electronic mail; Electrons; Impedance; MOSFETs; Noise generators; Noise measurement; Thermal engineering; Velocity measurement;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233642
