Title :
Simulation of noise characteristics caused by discretized traps in MOSFETs
Author :
Matsuzawa, Kazuya ; Ohguro, Tatsuya ; Aoki, Nobutoshi
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the fluctuations observed in the measured noise characteristics. The partial Monte Carlo method was used to clarify the roles of the carrier and mobility fluctuations.
Keywords :
MOSFET; Monte Carlo methods; flicker noise; semiconductor device models; semiconductor device noise; MOSFETs; analytical approach; carrier fluctuations; device simulator; discretized traps; flicker noise; gate insulators; mobility fluctuations; partial Monte Carlo method; statistical calculation; 1f noise; Analytical models; Circuit noise; Fluctuations; Insulation; Low-frequency noise; MOSFETs; Noise measurement; Semiconductor device noise; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233643
