Simulation of noise characteristics caused by discretized traps in MOSFETs

Author

Matsuzawa, Kazuya ; Ohguro, Tatsuya ; Aoki, Nobutoshi

Author_Institution

Toshiba Corp., Yokohama, Japan

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

83

Lastpage

86

Abstract

Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the fluctuations observed in the measured noise characteristics. The partial Monte Carlo method was used to clarify the roles of the carrier and mobility fluctuations.

Keywords

MOSFET; Monte Carlo methods; flicker noise; semiconductor device models; semiconductor device noise; MOSFETs; analytical approach; carrier fluctuations; device simulator; discretized traps; flicker noise; gate insulators; mobility fluctuations; partial Monte Carlo method; statistical calculation; 1f noise; Analytical models; Circuit noise; Fluctuations; Insulation; Low-frequency noise; MOSFETs; Noise measurement; Semiconductor device noise; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233643

Filename

1233643