DocumentCode
2095776
Title
Zero-flux boundary condition in a two-probability-parameter random walk model
Author
Orlowski, Marius
Author_Institution
DDL Labs., Motorola Inc., Austin, TX, USA
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
113
Lastpage
116
Abstract
Zero-flux boundary condition is revisited in the context of a two-probability-para meter and a rigorous combinatorial model. The two-parameter model distinguishes partial segregation, partial absorption, and partial reflection. Both models show that vanishing flux across the barrier can be realized for non-zero gradient of the dopant distribution at the boundary.
Keywords
diffusion; semiconductor process modelling; combinatorial model; diffusion barrier; dopant distribution; nonzero gradient; partial absorption; partial reflection; partial segregation; two-probability-parameter model; zero-flux boundary condition; Absorption; Boundary conditions; Context modeling; Dielectrics; Laboratories; Lattices; Reflection; Semiconductor films; Semiconductor impurities; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233650
Filename
1233650
Link To Document