Title :
SOI technologies, materials and devices
Author :
Cristoloveanu, S. ; Balestra, Francis
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
Silicon On Insulator (SOI), considered for a long time as the technology of the `future´, is presently being regarded as the most attractive candidate for low-voltage ULSI circuits. A major condition for competing with bulk silicon is the degree of understanding of material properties, fabrication techniques, and device operation. This paper reviews the main advantages of SOI devices and the various technological approaches. Material characterization techniques and related properties are also addressed. Subsequent sections describe the special mechanisms involved in the operation of thin SOI MOSFETs and the most efficient device-based characterization methods. Finally, it is shown that a key challenge for SOI technology is the control of the device degradation induced by hot-carrier injection
Keywords :
CMOS integrated circuits; MOSFET; ULSI; hot carriers; integrated circuit measurement; integrated circuit reliability; silicon-on-insulator; CMOS technologies; MOSFETs; SOI technologies; device degradation; device-based characterization methods; fabrication techniques; hot-carrier injection; low-voltage ULSI circuits; material characterization techniques; Annealing; CMOS logic circuits; CMOS technology; Implants; Optical films; Optical materials; Optical waveguides; Radiation effects; Semiconductor films; Silicon on insulator technology;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557299