Title :
Detailed heat generation simulations via the Monte Carlo method
Author :
Pop, Eric ; Dutton, Robert ; Goodson, Kenneth
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
As current device technologies advance into the sub-continuum regime, they operate at length scales on the order of the electron and phonon mean free path. The ballistic conditions lead to strong non-equilibrium at nanometer length scales. The electron-phonon interaction is not energetically or spatially uniform and the generated phonons have widely varying contributions to heat transport. This work examines the microscopic details of Joule heating in bulk silicon with Monte Carlo simulations including acoustic and optical phonon dispersion. The approach provides an engineering tool for electro-thermal analysis of future nano-devices.
Keywords :
Monte Carlo methods; electron-phonon interactions; elemental semiconductors; nanotechnology; silicon; Joule heating; Monte Carlo simulations; Si; acoustic phonon dispersion; ballistic conditions; bulk silicon; electro-thermal analysis; electron-phonon interaction; heat transport; nano-devices; optical phonon dispersion; Acoustic scattering; Brillouin scattering; Electron optics; Energy exchange; Heating; Optical microscopy; Optical scattering; Phonons; Silicon; Stimulated emission;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233652
