Investigation of the detailed structure of atomically sharp Ge/SiO/sub 2/ interfaces

Author

Liang, Tao ; Windl, Wolfgang ; Lopatin, Sergei ; Duscher, Gerd

Author_Institution

Dept. of Mater. Sci. & Eng., Ohio State Univ., Columbus, OH, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

143

Lastpage

146

Abstract

The atomic structure of the interface between Ge and SiO/sub 2/ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO/sub 2/ interface with probably small fractions of Ge in the oxide.

Keywords

Monte Carlo methods; density functional theory; electron energy loss spectra; elemental semiconductors; germanium; interface structure; semiconductor-insulator boundaries; silicon compounds; Ge-SiO/sub 2/; abrupt interface; atomic structure; atomic-resolution Z-contrast imaging; atomically sharp interfaces; density-functional simulations; electron energy loss spectroscopy; kinetic-Monte Carlo simulations; Atomic measurements; Educational institutions; Electrons; Image resolution; Impurities; Materials science and technology; Oxidation; Power engineering and energy; Semiconductor process modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233657

Filename

1233657