DocumentCode
2096100
Title
Complex impurity dynamics in silicon
Author
Pantelides, S.T. ; Ramamoorthy, M. ; Maiti, A. ; Chisholm, M. ; Pennycook, S.J.
Author_Institution
Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
Volume
1
fYear
1996
fDate
9-12 Oct 1996
Firstpage
13
Abstract
We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si
Keywords
arsenic; diffusion; elemental semiconductors; grain boundary segregation; heavily doped semiconductors; impurities; oxygen; silicon; Si:As; Si:O; clustering; complex impurity dynamics; declustering; first-principles calculations; grain boundaries; heavily-doped crystalline Si; impurity migration; ordered chains; segregation; Crystallization; Grain boundaries; Heating; Impurities; Laboratories; Microelectronics; Physics; Quantum computing; Silicon; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557300
Filename
557300
Link To Document