Title :
Complex impurity dynamics in silicon
Author :
Pantelides, S.T. ; Ramamoorthy, M. ; Maiti, A. ; Chisholm, M. ; Pennycook, S.J.
Author_Institution :
Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si
Keywords :
arsenic; diffusion; elemental semiconductors; grain boundary segregation; heavily doped semiconductors; impurities; oxygen; silicon; Si:As; Si:O; clustering; complex impurity dynamics; declustering; first-principles calculations; grain boundaries; heavily-doped crystalline Si; impurity migration; ordered chains; segregation; Crystallization; Grain boundaries; Heating; Impurities; Laboratories; Microelectronics; Physics; Quantum computing; Silicon; Solid state circuits;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557300
