Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions

Author

Chakravarthi, S. ; Kohli, P. ; Chidambaram, P.R. ; Bu, H. ; Jain, A. ; Hornung, B. ; Machala, C.F.

Author_Institution

Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

159

Lastpage

162

Abstract

A novel model is developed to explain the effect of the source/drain sidewall spacer process on boron drain extension formation. A diffusion model for hydrogen in the source/drain sidewall spacer is developed and combined with a model for boron diffusion in oxides. The model is first calibrated to hydrogen out-diffusion data from Nuclear Reaction Analysis (NRA) and then to boron diffusion data from Secondary Ion Mass Spectroscopy (SIMS). Seemingly anomalous changes in boron junction depths with variation in sidewall spacer deposition conditions are explained by this model. The model is applied to TCAD process/device simulations to understand the effect of sidewall spacer on CMOS device performance.

Keywords

CMOS integrated circuits; boron; diffusion; elemental semiconductors; hydrogen; integrated circuit modelling; nuclear chemical analysis; secondary ion mass spectra; semiconductor doping; semiconductor junctions; semiconductor process modelling; silicon; technology CAD (electronics); CMOS device performance; SIMS; Si:H,B; TCAD; boron diffusion; boron drain extension formation; boron junction depths; boron ultra shallow junctions; device simulations; diffusion model; hydrogen; hydrogen out-diffusion; model; nuclear reaction analysis; oxides; secondary ion mass spectroscopy; sidewall spacer; source/drain sidewall spacer process; Annealing; Boron; Hydrogen; Instruments; Mass spectroscopy; Semiconductor device modeling; Silicon; Space technology; Telephony; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233661

Filename

1233661