Title :
Device design of SiGe HBTs with low distortion characteristics using harmonic balance device simulator
Author :
Sato-Wanaga, J. ; Asai, Akira ; Takagi, Takeshi ; Tanabe, Mitsuru ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
Distortion simulation of a SiGe HBT based on physical model and applying harmonic balance method has been demonstrated. It was obtained that for short carrier lifetime the 3/sup rd/ intermodulation distortion (IMD) current was reduced and the intercept point of 3/sup rd/ IMD was improved in 6 dBm with our example.
Keywords :
Ge-Si alloys; carrier lifetime; current density; heterojunction bipolar transistors; intermodulation distortion; semiconductor device models; 3/sup rd/ intermodulation distortion current; SiGe; SiGe HBTs; device design; harmonic balance device simulator; low distortion characteristics; short carrier lifetime; Capacitance; Charge carrier lifetime; Charge carrier processes; Circuit simulation; Germanium silicon alloys; Harmonic distortion; Heterojunction bipolar transistors; Intermodulation distortion; Radio frequency; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233671
