Title :
Study on cell characteristics of PRAM using the phase-change simulation
Author :
Kim, Young-Tae ; Lee, Keun-Ho ; Chung, Won-Young ; Kim, Tai-Kyung ; Park, Young-Kwan ; Kong, Jeong-Taek
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd, Gyeonggi-Do, South Korea
Abstract :
In this paper, we present a new simulation methodology for analyzing cell characteristics of the chalcogenide based phase-change device, PRAM (Phase-change Random Access Memory), which is the future-generation non-volatile memory. Using the new simulation methodology, we analyze the effect of process variation, which is the most sensitive factor to operate the cell of PRAM.
Keywords :
concurrency theory; random-access storage; semiconductor device models; PRAM; cell characteristics; chalcogenide based phase-change device; future-generation nonvolatile memory; phase-change random access memory; phase-change simulation; simulation methodology; Analytical models; Computer aided engineering; Crystallization; DC generators; Heat transfer; Heating; Phase change random access memory; Research and development; Thermal conductivity; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233674
