An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect

Author

Lee, Kyu-Il ; Lee, Chanho ; Shin, Hyungsoon ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

231

Lastpage

234

Abstract

In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 /spl mu/m regime.

Keywords

MOSFET; harmonic distortion; master equation; semiconductor device models; surface potential; 0.1 micron; charge-sheet model; current responses; efficient method; external voltage; frequency-domain analysis; frequency-domain simulation; harmonic balance analysis; large signal conditions; nonquasistatic effect; short channel MOSFET; time-dependent two-dimensional simulator; Analytical models; CMOS technology; Circuit simulation; Computational modeling; Distortion; Frequency domain analysis; Harmonic analysis; MOSFET circuits; Semiconductor device modeling; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233679

Filename

1233679