Title :
An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect
Author :
Lee, Kyu-Il ; Lee, Chanho ; Shin, Hyungsoon ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
Abstract :
In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 /spl mu/m regime.
Keywords :
MOSFET; harmonic distortion; master equation; semiconductor device models; surface potential; 0.1 micron; charge-sheet model; current responses; efficient method; external voltage; frequency-domain analysis; frequency-domain simulation; harmonic balance analysis; large signal conditions; nonquasistatic effect; short channel MOSFET; time-dependent two-dimensional simulator; Analytical models; CMOS technology; Circuit simulation; Computational modeling; Distortion; Frequency domain analysis; Harmonic analysis; MOSFET circuits; Semiconductor device modeling; Time domain analysis;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233679
