Title :
A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions
Author :
Hane, Masami ; Kawakami, Yukiya ; Nakamura, Hideyuki ; Yamada, Takashi ; Kumagai, Kouich ; Watanabe, Yukinobu
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for /spl alpha/-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-/spl mu/m SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.
Keywords :
SRAM chips; alpha-particle effects; neutron effects; radiation hardening (electronics); semiconductor device models; /spl alpha/-particles; 0.15 micron; 3D device simulation; acceleration tests; cell-area reduction; comprehensive SRAM soft-error simulation; neutron nuclear reactions; power supply voltage dependency; precise charge collection amounts; reduced critical charges; CMOS technology; Circuit simulation; Discrete event simulation; Electronic equipment testing; National electric code; Neutrons; Particle beams; Random access memory; Sampling methods; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233681
