Title :
Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers
Author :
Chao Liu ; Taiping Lu ; Zhiwei Ren ; Xin Chen ; Bijun Zhao ; Yian Yin ; Jinhui Tong ; Shuti Li
Author_Institution :
Inst. of Opto-Electron. Mater. & Technol., South China Normal Univ., Guangzhou, China
Abstract :
Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; AlGaN; GaN; InGaN; blue light emitting diode; efficiency droop; light output power; multiple quantum wells light emitting diode; p-type quantum barriers;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
