DocumentCode
2096695
Title
Performance enhancement of InGaN/GaN LEDs by using localized surface plasmons: Problems and possible solutions
Author
Lee-Woon Jang ; Polyakov, A.Y. ; Yong-Hoon Cho ; In-Hwan Lee
Author_Institution
Sch. of Adv. Mater. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
1
Abstract
Localized surface plasmon effects due to Ag and Ag/SiO2 nanoparticles deposited on GaN/InGaN multi-quantum well light-emitting diode structures were studied. The enhanced photoluminescence efficiency was attributed to energy coupling between the quantum well and surface plasmon in the nanoparticles.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanoparticles; photoluminescence; quantum well devices; silver; surface plasmons; wide band gap semiconductors; Ag; Ag-SiO2; InGaN-GaN; LED; energy coupling; enhanced photoluminescence efficiency; localized surface plasmons; multiquantum well light-emitting diode structures; nanoparticles;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510915
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