Simulation of 2D quantum transport in ultrashort DG-MOSFETs : a fast algorithm using subbands

Author

Abdallah, N.B. ; Polizzi, Eric ; Mouis, Mireille ; Méhats, Florian

Author_Institution

Lab. MIP, UMR CNRS, Toulouse, France

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

267

Lastpage

270

Abstract

A numerical method for the resolution of the two dimensional Schrodinger equation with an incoming plane wave boundary condition is proposed and applied to the simulation of ultrashort channel double gate MOSFETs. The method relies on the decomposition of the wave function on subband eigenfunctions. The 2-D Schrodinger equation is then equivalent to a nondiagonal one-dimensional matrix Schrodinger system. The size of the matrix being the number of considered subbands. This leads to a drastic reduction of numerical cost. The method is illustrated by simulating a squeezed channel DGMOS.

Keywords

MOSFET; Schrodinger equation; eigenvalues and eigenfunctions; quantum interference phenomena; semiconductor device models; wave functions; 2-D Schrodinger equation; 2D quantum transport; fast algorithm; incoming plane wave boundary condition; nondiagonal one-dimensional matrix Schrodinger system; numerical cost; numerical method; squeezed channel DGMOS; subband eigenfunctions; subbands; two dimensional Schrodinger equation; ultrashort DG-MOSFETs; Boundary conditions; Costs; Eigenvalues and eigenfunctions; Electrons; Equations; Geometry; MOSFETs; Matrix decomposition; Silicon; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233688

Filename

1233688