Title :
An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions
Author :
Govoreanu, Bogdan ; Blomme, Pieter ; Henson, Kirklen ; Van Houdt, Jan ; De Meyer, Kristin
Author_Institution :
SPDT Div., IMEC, Leuven, Belgium
Abstract :
An efficient yet accurate model is used for investigating tunneling of minority carriers from the inversion layer of ultrathin MOSFET structures. The model is derived from the concept of the quasibound states lifetimes, which are calculated using a transfer matrix method based on Airy functions. Comparison with experimental data is provided. Performance of high-k materials is discussed and an investigation of their scalability for future CMOS technology nodes is carried out.
Keywords :
CMOS integrated circuits; MOSFET; interface states; inversion layers; leakage currents; semiconductor device models; transfer function matrices; tunnelling; Airy functions; CMOS technology nodes; electron tunneling leakage current; high-k materials; inversion conditions; inversion layer; minority carriers; quasibound state lifetimes; scalability; transfer matrix method; tunneling; ultrathin MOSFET structures; ultrathin oxide/high-k gate stacks; CMOS technology; Electrons; Gate leakage; High K dielectric materials; High-K gate dielectrics; Leakage current; Potential well; Probability; Scalability; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233693
