DocumentCode
2096842
Title
Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature
Author
Razeghi, M. ; Lim, H. ; Tsao, S. ; Seo, H. ; Zhang, W.
Author_Institution
Northwestern Univ., Evanston
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
15
Lastpage
16
Abstract
We report a room temperature operating and high-performance InAs quantum-dot infrared photodetector on InP substrate and thermal imaging of 320times256 focal plane array based on this device up to 200 K.
Keywords
III-V semiconductors; focal planes; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InAs-InP; focal plane array; quantum-dot infrared photodetector; temperature 293 K to 298 K; thermal imaging; Detectors; Electromagnetic wave absorption; Indium phosphide; Infrared imaging; Optical imaging; Photodetectors; Quantum computing; Quantum dots; Temperature sensors; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382251
Filename
4382251
Link To Document