DocumentCode :
2096916
Title :
Integrated multiscale multistep process simulation
Author :
Im, Yeon Ho ; Bloomfield, M.O. ; Sukam, Cyriaque P. ; Tichy, John A. ; Cale, Timothy S. ; Seok, Jongwon
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2003
fDate :
3-5 Sept. 2003
Firstpage :
307
Lastpage :
310
Abstract :
We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.
Keywords :
chemical mechanical polishing; etching; integrated circuit modelling; process design; surface roughness; vapour deposition; 2D simulators; PVD barrier deposition; PVD seed layer deposition; additive-containing bath; blanket SiO/sub 2/ substrate; chemical mechanical polishing; electrochemical deposition; fully 3d/3d simulations; integrated multiscale multistep process simulation; plasma etching; porous materials; simple Damascene structure; Atherosclerosis; Chemicals; Copper; Etching; Fabrication; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma simulation; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
Type :
conf
DOI :
10.1109/SISPAD.2003.1233698
Filename :
1233698
Link To Document :
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