• DocumentCode
    2096916
  • Title

    Integrated multiscale multistep process simulation

  • Author

    Im, Yeon Ho ; Bloomfield, M.O. ; Sukam, Cyriaque P. ; Tichy, John A. ; Cale, Timothy S. ; Seok, Jongwon

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2003
  • fDate
    3-5 Sept. 2003
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.
  • Keywords
    chemical mechanical polishing; etching; integrated circuit modelling; process design; surface roughness; vapour deposition; 2D simulators; PVD barrier deposition; PVD seed layer deposition; additive-containing bath; blanket SiO/sub 2/ substrate; chemical mechanical polishing; electrochemical deposition; fully 3d/3d simulations; integrated multiscale multistep process simulation; plasma etching; porous materials; simple Damascene structure; Atherosclerosis; Chemicals; Copper; Etching; Fabrication; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma simulation; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7826-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2003.1233698
  • Filename
    1233698