DocumentCode
2096947
Title
Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation
Author
Akturk, Akin ; Goldsman, Neil ; Metze, George
Author_Institution
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
fYear
2003
fDate
3-5 Sept. 2003
Firstpage
311
Lastpage
314
Abstract
A method for predicting full chip temperature heating resulting from device operation is presented. The method couples distributed device simulation with lumped thermal analysis. Predictions show sixty degree Kelvin temperature increases for 0.5 cm IC´s. A method for reducing chip temperature is also presented.
Keywords
MOSFET; integrated circuit modelling; semiconductor device models; thermal resistance; 0.5 cm; coupled modeling; distributed device simulation; lumped thermal analysis; quantum nonisothermal device operation; time-dependent full-chip heating; Charge carrier processes; Differential equations; Heat engines; Integral equations; Lattices; Poisson equations; Resistance heating; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7826-1
Type
conf
DOI
10.1109/SISPAD.2003.1233699
Filename
1233699
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