Title :
A new method for simulation of on-chip interconnects and substrate currents with 3D alternating-direction-implicit (ADI) Maxwell solver
Author :
Shao, Xi ; Goldsman, Neil ; Ramahi, Omar ; Guzdar, Parvez N.
Author_Institution :
Space Phys. Data Facility, NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
We introduce a time-domain method to simulate the digital signal propagation along on-chip interconnects by solving Maxwell´s equations with the Alternating-Direction-Implicit (ADI) method. With this method, we are able to resolve the large scale (i.e. on-chip electromagnetic wave propagation) and fine scale (i.e. skin depth and substrate current) structure in the same simulation, and the simulation time step is not limited by the Courant condition. The simulations allow us to calculate in detail parasitic current flow inside the substrate; propagation losses; skin-depth; and dispersion of digital signals on non-ideal interconnects. We have found considerable substrate currents and losses that depend on the substrate doping.
Keywords :
Maxwell equations; electromagnetic wave propagation; semiconductor device models; skin effect; time-domain analysis; 3D alternating-direction-implicit Maxwell solver; Courant condition; digital signal propagation; digital signals dispersion; on-chip electromagnetic wave propagation; on-chip interconnects; parasitic current flow; propagation losses; simulation; skin depth; substrate current; substrate currents; time-domain method; Differential algebraic equations; Doping; Electromagnetic propagation; Finite difference methods; Magnetic fields; Maxwell equations; Physics; Propagation losses; Semiconductor process modeling; Time domain analysis;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233700