Title :
Monolithic growth of InAs-QDs with different absorption wavelengths in different areas for integrated optical devices
Author :
Takata, Y. ; Ozaki, N. ; Ohkouchi, S. ; Sugimoto, Y. ; Ikeda, N. ; Watanabe, Y. ; Kitagawa, Y. ; Mizutani, A. ; Asakawa, K.
Author_Institution :
Univ. of Tsukuba, Tsukuba
Abstract :
We have developed a technique for selective-area-growth (SAG) of InAs quantum dots (QDs) having different absorption wavelengths, with the goal of using them in all-optical integrated devices. This technique, using the metal-mask method and the insertion of a strain-reducing-layer, provides successful SAG of QDs absorbing at different wavelengths in different areas. This SAG technique is promising for various QD applications as well as our proposed photonic-crystal-based all optical switch (PC-SMZ) and digital flip-flop device (PC-FF).
Keywords :
III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; InAs; digital flip-flop device; integrated optical devices; metal-mask method; monolithic growth; photonic-crystal-based all optical switch; quantum dots; selective-area-growth; strain-reducing-layer; Absorption; Flip-flops; Gallium arsenide; Optical control; Optical devices; Optical pulses; Optical switches; Photonic crystals; Strain control; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382259
