Title :
Doping Characterization of InAs/GaAs Quantum Dot Heterostructure by Cross-Sectional Scanning Capacitance Microscopy
Author :
Zhao, Z.Y. ; Zhang, W.M. ; Yi, C. ; Stiff-Roberts, A.D. ; Rodriguez, B.J. ; Baddorf, A.P.
Author_Institution :
Duke Univ., Durham
Abstract :
Cross-section of multi-layer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscopy to investigate dopant incorporation into quantum dots. Simulation of the corresponding band structure is used to better understand the experimental results.
Keywords :
III-V semiconductors; band structure; gallium arsenide; indium compounds; semiconductor doping; semiconductor quantum dots; InAs-GaAs; band structure; cross-sectional scanning capacitance microscopy; doping; quantum dot heterostructure; Atomic force microscopy; Dark current; Electrons; Etching; Gallium arsenide; Infrared spectra; Molecular beam epitaxial growth; Quantum capacitance; Quantum dots; Semiconductor device doping;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382260
