Title :
Nb-doped PbTiO3 films deposited on MgO substrates
Author :
Ibrahim, Ricardo Cury ; Shiosaki, Tadashi ; Horiuchi, Toshihisa ; Matsushige, Kazumi
Author_Institution :
Dept. of Mechatronics & Mech. Syst., Sao Paulo Univ., Brazil
Abstract :
Highly (001)-oriented PbTiO3 thin films were deposited on MgO and Pt/MgO substrates by reactive sputtering. The films were deposited at substrate temperatures around 530°C. Epitaxial growth and domain formation could be verified by the conventional θ-2θ Bragg-Brentano X-ray diffraction and by the newly developed “in-plane energy dispersive total reflection X-ray diffraction” (ED-TXRD) technique. The lattice parameters of the films could be determined from diffraction patterns from both X-ray techniques. In spite of some lattice mismatches between the substrates and the PbTiO3 films, it was found that Nb-doped films had improved dielectric properties over undoped ones. Nb-doped PbTiO3 films may be very suitable for fabrication of MEMS, pressure and pyroelectric sensors, SAW devices, memory devices, etc
Keywords :
X-ray diffraction; dielectric losses; epitaxial layers; lead compounds; permittivity; piezoelectric thin films; sputter deposition; vapour phase epitaxial growth; 530 degC; Bragg-Brentano X-ray diffraction; MgO; MgO substrates; PbTiO3NbO3; dielectric loss; domain formation; energy dispersive total reflection X-ray diffraction; epitaxial growth; highly (001)-oriented films; lattice parameters; permittivity; piezoelectric film; reactive sputtering; thin films; Dielectric films; Dielectric substrates; Dispersion; Epitaxial growth; Lattices; Optical films; Reflection; Sputtering; Temperature; X-ray diffraction;
Conference_Titel :
Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE
Conference_Location :
Caesars Tahoe, NV
Print_ISBN :
0-7803-5722-1
DOI :
10.1109/ULTSYM.1999.849165
