DocumentCode :
2097601
Title :
Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: contributing mechanisms
Author :
Gaisenu, F. ; Drimitriadis, C.A. ; Stoemenos, J. ; Postolache, C. ; Angelis, C.
Author_Institution :
Res. Inst. for Electron. Components, Bucharest, Romania
Volume :
1
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
61
Abstract :
TEM investigations of the LP-LT-CVD thick (1500 nm) polySi layer on 16 nm SiO2/Si allow one to introduce specific mechanisms to explain the fast polySi regrowth and the SiO2 degradation during a short-time (15 min.) moderate (1030°C) heat-temperature treatment and during a subsequent 20 min., 1030°C annealing
Keywords :
CVD coatings; annealing; diffusion; elemental semiconductors; phosphorus; semiconductor doping; semiconductor thin films; silicon; transmission electron microscopy; 1030 degC; CVD films; Si:P; SiO2 degradation; SiO2-Si; TEM; annealing; fast regrowth; phosphorus diffusion; semiconductor; thick polysilicon layers; Annealing; Bipolar transistors; Degradation; Electronic ballasts; Frequency; Heat treatment; Morphology; Silicon; Temperature; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557306
Filename :
557306
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2097601
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