Title :
A SPICE model for gate turn-off thyristors
Author :
Schwartzenberg, J. ; Tsay, C.L. ; Fischl, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
Abstract :
The authors present a SPICE gate turn-off thyristor (GTO) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of a parallel connection of two-transistors, three-resistor (2T-3R) cells. The accuracy of the model depends on the number of 2T-3R cells used. This multi-cell GTO model enables one to simulate the static-type negative differential resistance (NDR) I-V characteristics and the switching characteristics of the GTO with a high degree of accuracy. The experimental validation test shows that two parallel 2T-3R cells simulate the switching characteristics of the GTO accurately. A sensitivity study of the SPICE model performance with respect to the model parameters is used to develop the model synthesis procedure
Keywords :
electronic engineering computing; semiconductor device models; software packages; thyristors; 2T-3R cells; GTO; I-V characteristics; SPICE; accuracy; dynamic switching; gate turn-off thyristors; performance; resistors; semiconductor device models; sensitivity; software packages; static negative differential resistance; synthesis; transistors; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Electric resistance; P-n junctions; Power electronics; Resistors; SPICE; Thyristors;
Conference_Titel :
Power Symposium, 1990., Proceedings of the Twenty-Second Annual North American
Conference_Location :
Auburn, AL
Print_ISBN :
0-8186-2115-X
DOI :
10.1109/NAPS.1990.151366
