Title :
Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stress
Author :
Samanta, Piyas ; Sarkar, C.K.
Author_Institution :
Dept. of Phys., Jadaupar Univ., Calcutta, India
Abstract :
Metal-Oxide-Silicon (MOS) device degradation due to trapped holes in the bulk of thin SiO2 (22-33 nm) gate oxide during low fluence Fowler-Nordheim (FN) injection from the accumulated ⟨100⟩ n-Si of n+ polySi gate MOS capacitors has been theoretically modeled. The model is based on tunneling electron initiated band-to-band impact ionization (BTBII) as the possible source of generated holes. The validity of the present analysis has been compared with the experimental data of FN voltage shift ΔVFN of Fazan et al. A comparative study of degradation during constant current and voltage FN stress is also presented
Keywords :
MOS capacitors; hole traps; impact ionisation; semiconductor device models; tunnelling; Fowler-Nordheim stress; MOS device degradation; Si-SiO2; SiO2 gate oxide; band-to-band impact ionization; electron tunneling; model; n+ polySi gate MOS capacitor; trapped holes; Cathodes; Degradation; Electron traps; Energy capture; Equations; MOS devices; Physics; Stress; Tunneling; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557307
