DocumentCode
2097883
Title
Type II Strain Layer Superlattices (SLS´s) grown on GaAs Substrates
Author
Sharma, Y.D. ; Bishop, G. ; Kim, H.S. ; Rodriguez, J.B. ; Plis, E. ; Balakrishnan, G. ; Dawson, L.R. ; Huffaker, D.L. ; Krishna, S.
Author_Institution
Univ. of New Mexico, Albuquerque
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
96
Lastpage
97
Abstract
We report on type-II SLS´s photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial- misfit-approach, which relieves the strain though 90 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.
Keywords
III-V semiconductors; buffer layers; dark conductivity; dislocations; gallium compounds; photodiodes; semiconductor superlattices; GaAs; GaSb; buffer; dark current; interfacial misfit; misfit dislocations; quantum efficiency; type II strain layer superlattices; type-II photodiodes; Capacitive sensors; Diodes; Gallium arsenide; Infrared detectors; Laser sintering; Lattices; Substrates; Superlattices; Temperature measurement; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382293
Filename
4382293
Link To Document