DocumentCode :
2097930
Title :
Measurement of Photo-Induced Refractive Index Change in As0.42-x-yGexSbyS0.58 Bulks Induced by Fs Near IR Laser Exposure
Author :
Choi, J. ; Carlie, N. ; Petit, L. ; Anderson, T. ; Richardson, K. ; Richardson, M.
Author_Institution :
Univ. of Central Florida, Orlando
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
100
Lastpage :
101
Abstract :
Fs MR exposure has been used to induce refractive index change in bulks in the As0.42-x-yGexSbyS0.58 system. Photo- induced Deltan has been investigated as a function of laser dose by measuring diffraction efficiency of buried gratings.
Keywords :
antimony compounds; arsenic compounds; chalcogenide glasses; germanium compounds; refractive index; As0.42GeSbS0.58; diffraction efficiency; function of laser dose; photo-induced refractive index change; Glass; Laser ablation; Laser modes; Optical interferometry; Optical materials; Optical refraction; Optical surface waves; Refractive index; Surface emitting lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382295
Filename :
4382295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2097930
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