DocumentCode :
2098012
Title :
Recent development in gate controlled switches
Author :
Kao, Y.C. ; Brewster, J.B.
Author_Institution :
Westinghouse Electric Corporation, Pittsburgh, Pennsylvania 15235
fYear :
1973
fDate :
11-13 June 1973
Firstpage :
90
Lastpage :
96
Abstract :
Improved understanding of the design and operation of these devices has led to the successful development of a new generation of high power gate controlled switches. The devices reported here have an 800 volt forward blocking capability. The forward drop is less than 1.7 volts at 100 amperes and the devices turn-off 100 amperes in about 1 microsecond. Testing techniques and procedures have been developed to fully characterize these devices and to provide an understanding of the effect of various circuit conditions on switching performance. These advancements greatly extend the potential use fulness of gate controlled switches in power electronics applications.
Keywords :
Anodes; Cathodes; Delays; Inductance; Logic gates; Switches; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1973 IEEE
Conference_Location :
Pasadena, California, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1973.7065174
Filename :
7065174
Link To Document :
بازگشت