Optimizing the noise figure of low noise amplifier over bias and frequency

Author

Li, Linan ; Zhang, Lijun

Author_Institution

Sch. of Electron. & Inf. Eng., Beijing Jiaotong Univ., Beijing, China

fYear

2010

fDate

11-14 Nov. 2010

Firstpage

361

Lastpage

364

Abstract

In this paper, we present the design of an integrated low noise amplifier (LNA) for Wireless LAN applications in the 5.15-5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine the optimum bias point for achieving the minimum noise figure is put forward. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.11a WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is -8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; low noise amplifiers; semiconductor materials; wireless LAN; 802.11a WLAN; BiCMOS technology; frequency 5.15 GHz to 5.825 GHz; integrated LNA; integrated low noise amplifier; noise figure; noise figure optimisation; noise match; power match; wireless LAN applications; Equations; Noise measurement; LNA; SiGe HBT; noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Technology (ICCT), 2010 12th IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6868-3

Type

conf

DOI

10.1109/ICCT.2010.5689212

Filename

5689212