DocumentCode
2098317
Title
High Performance Transparent Thin Film Transistors Fabricated by Fully Lithographic and Etching Processes
Author
Hsieh, Hsing-Hung ; Wu, Cheng-Han ; Chen, Chang-Ken ; Wu, Chung-Chih
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
133
Lastpage
134
Abstract
High Performance top-gate amorphous GIZO TTFTs were fabricated by using all lithographic and etching processes. The completed devices show rather high field-effect mobilities and on/off current ratios suitable for real applications.
Keywords
amorphous semiconductors; etching; lithography; thin film transistors; etching; field-effect mobilities; high performance top-gate amorphous GIZO TTFTs; high performance transparent thin film transistors; lithography; on-off current ratios; Amorphous materials; Backplanes; Electrodes; Glass; Indium tin oxide; Sputter etching; Sputtering; Substrates; Thin film transistors; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382312
Filename
4382312
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