DocumentCode
2098341
Title
High Mobility Indium Gallium Zinc Oxide for Transparent Conductive Contacts and Thin Film Transistors
Author
Suresh, Arun ; Wellenius, Patrick ; Muth, John F.
Author_Institution
North Carolina State Univ., Raleigh
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
135
Lastpage
136
Abstract
Thin amorphous films of high electron mobility, optically transparent indium gallium zinc oxide (IGZO) were deposited by pulsed laser deposition. Electrical conductivity was controlled allowing high performance, optically transparent thin film transistors to be fabricated.
Keywords
amorphous semiconductors; electrical conductivity; electron mobility; gallium compounds; indium compounds; pulsed laser deposition; semiconductor growth; semiconductor thin films; thin film transistors; InGaZnO; electrical conductivity; electron mobility; pulsed laser deposition; thin amorphous films; thin film transistors; transparent conductive contacts; Amorphous materials; Conductivity; Contacts; Electron mobility; Electron optics; Indium gallium zinc oxide; Optical films; Optical pulses; Pulsed laser deposition; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382313
Filename
4382313
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