Title :
Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications
Author :
Poloczek, A. ; Weiss, M. ; Fedderwitz, S. ; Stoehr, A. ; Prost, W. ; Jaeger, D. ; Tegude, F.J.
Author_Institution :
Univ. Duisburg-Essen, Duisburg
Abstract :
An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.
Keywords :
III-V semiconductors; digital integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; InGaAs; Si; bit error rate; bit rate 10 Gbit/s; lattice mismatch; monolithic integration; pin diode; silicon (001) substrate; Bit error rate; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Lattices; Optical buffering; Optical devices; Optical microscopy; Silicon; Substrates; III/V on silicon; bit error rate; co-integration; photo detector; pin-diode;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382336
