Analytical Model and Simulation for AlGaN/GaN High Electron Mobility Transistor

Author

Xia, Jiang ; Ruixia, Yang ; Zhengping, Zhao ; Zhiguo, Zhang ; Zhihong, Feng

Author_Institution

Coll. of Inf. Eng., Hebei Univ. of Technol., Tianjin, China

fYear

2011

fDate

17-18 Sept. 2011

Firstpage

359

Lastpage

361

Abstract

Based on the charge control theory, a accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor (HEMT) is presented considering the relationship between self-heating effect and polarization, electron mobility, velocity saturation, conduction band discontinuity, doping concentration, channel temperature. The comparison between simulations and physical calculation shows a good agreement. The model is simple in calculations, suitable for design of microwave device and circuit.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; channel temperature; charge control theory; conduction band discontinuity; doping concentration; high electron mobility transistor; self-heating effect; velocity saturation; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Temperature; Temperature measurement; Threshold voltage; AlGaN/GaN HEMT Self-heating Analytical model;

fLanguage

English

Publisher

ieee

Conference_Titel

Internet Computing & Information Services (ICICIS), 2011 International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4577-1561-7

Type

conf

DOI

10.1109/ICICIS.2011.93

Filename

6063270