Resonant cavity SiGe/Si MQW heterojunction phototransistor grown on the SIMOX substrate for 1.3 μm operation

Author

Zhu, Yuqing ; Yang, Qinqing ; Wang, Qiming

Author_Institution

Inst. of Semicond., Acad. of Sci., Beijing, China

fYear

1997

fDate

18-21 May 1997

Firstpage

1199

Lastpage

1204

Abstract

We propose a method for fabricating a novel SiGe/Si MQW resonant microcavity phototransistor. The device is to be grown on a SIMOX substrate. A window is formed by etch-stop technique on the back of the SIMOX substrate. A SiO₂/Si quarter wave stack is grown on the etched window and acts as the low reflectivity mirror. The upper mirror is a low reflectivity quarter wave stack formed on the top of the designed device. Simulation of the device indicates that improvement of quantum efficiency of the device can be achieved. The characteristics of the phototransistor are calculated following the thermionic-field-diffusion approach. It is expected that this device will have an improved optical gain and bandwidth

Keywords

Ge-Si alloys; SIMOX; cavity resonators; diffusion; elemental semiconductors; phototransistors; semiconductor materials; semiconductor quantum wells; silicon; 1.3 micrometre; MQW heterojunction phototransistor; SIMOX substrate; SiGe-Si; bandwidth; etch-stop technique; low reflectivity mirror; optical gain; quantum efficiency; quarter wave stack; resonant microcavity phototransistor; thermionic-field-diffusion approach; Etching; Germanium silicon alloys; Heterojunctions; Microcavities; Mirrors; Phototransistors; Quantum well devices; Reflectivity; Resonance; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1997. Proceedings., 47th

Conference_Location

San Jose, CA

ISSN

0569-5503

Print_ISBN

0-7803-3857-X

Type

conf

DOI

10.1109/ECTC.1997.606328

Filename

606328