DocumentCode
2099695
Title
A new bipolar magnetotransistor with combined phenomena of carrier deflection and emitter injection modulation
Author
Neagoe, Otilia ; Avram, Marioara
Author_Institution
Res. Inst. for Electron. Components, Bucharest, Romania
Volume
1
fYear
1996
fDate
9-12 Oct 1996
Firstpage
97
Abstract
The paper presents the project, fabrication and experimental results of a new dual-collector bipolar magnetotransistor. Two major operating principles such as the emitter injection modulation and the carrier deflection are reported a special design causes the variation of the device active area due to the carrier deflection in the base region so that a large collector current difference may result
Keywords
bipolar transistors; magnetic field measurement; magnetic sensors; bipolar magnetotransistor; carrier deflection; collector current; combined phenomena; dual-collector bipolar magnetotransistor; emitter injection modulation; fabrication; Ice; Joining processes; Magnetic circuits; Magnetic devices; Magnetic fields; Magnetic modulators; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557314
Filename
557314
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