Title :
Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
Author :
Marin, Olivier ; Urteaga, R. ; Comedi, D. ; Koropecki, R.R.
Author_Institution :
INTEC, Univ. Nac. del Litoral, Santa Fe, Argentina
Abstract :
Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
Keywords :
aluminium; electric field effects; nanoelectronics; nanostructured materials; porous semiconductors; rectification; semiconductor diodes; silicon; Al; Si; diode-like behavior; nanostructured porous silicon; rectification factor; rectifying characteristics; switchable electric field induced diode effect; unidirectional current flow; Metal/semiconductor interfaces; porous silicon (PS); switchable diode effect;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2253754
