Title :
Increase of Boron Precipitation in Nanostructured P-Type Silicon Germanium Thermoelectric Alloys
Author :
Gao, Zhaihui ; Zamanipour, Zahra ; Vashaee, Daryoosh
Author_Institution :
Helmerich Adv. Technol. Res. Center, Oklahoma State Univ., Tulsa, OK, USA
Abstract :
Precipitation as the phenomenon responsible for the electrically inactive Boron in nanostructured Silicon-Germanium alloy (Si1-xGex) is reported and investigated. It is shown that SiB3 and SiB6 are not responsible for the inactive boron as confirmed by X-ray diffraction analysis. The increase of the change of thermoelectric properties of Si1-xGex alloy with thermal cycling accompanies the decrease of the crystallite size as confirmed by our experiments. The dependence of the carrier concentration on temperature was obtained from detailed theoretical modeling.
Keywords :
Ge-Si alloys; Seebeck effect; X-ray diffraction; carrier density; crystallites; nanostructured materials; precipitation; semiconductor materials; Seebeck coefficient; Si1-xGex; X-ray diffraction; boron precipitation; carrier concentration; crystallite size; nanostructured p-type silicon germanium thermoelectric alloys; thermal cycling; Annealing; Boron; Conductivity; Grain boundaries; Powders; Silicon germanium;
Conference_Titel :
Green Technologies Conference, 2012 IEEE
Conference_Location :
Tulsa, OK
Print_ISBN :
978-1-4673-0968-4
Electronic_ISBN :
2166-546X
DOI :
10.1109/GREEN.2012.6200978
