Title :
Optical Gain Analysis of Staggered InGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm
Author :
Zhao, Hongping ; Arif, Ronald A. ; Ee, Yik-Khoon ; Tansu, Nelson
Author_Institution :
Lehigh Univ., Bethlehem
Abstract :
Staggered InGaN quantum wells are analyzed as improved gain media for laser diodes emitting at 420-500 nm, with enhancement of -48% in the peak gain and differential gain for the staggered structure emitting at 460 nm.
Keywords :
III-V semiconductors; indium compounds; semiconductor lasers; semiconductor quantum wells; InGaN; laser diodes; optical gain analysis; staggered InGaN quantum well active regions; Biomedical optical imaging; Capacitive sensors; Charge carrier density; Diode lasers; Gallium nitride; Light emitting diodes; Optical mixing; Quantum computing; Quantum well lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382435
