Analytical model to estimate the subthreshold swing of SOI FinFET

This paper presents an analytical model to approximate the subthreshold swing of a SOI-FinFET device. The model considers only the capacitive coupling inside the structure of the device and does not take the doping attenuation of the channel into consideration because the channel of SOI-FinFET is either undoped or lightly doped. The devolved model can be used to analyze the impacts of various device parameters on the subthreshold behavior of SOI-FinFET. It is deducted that by optimizing the internal geometric parameters it is possible to achieve a subthreshold swing (S) or inverse subthreshold slope value close to 60mv/decade for SOI-FinFET. For the existing and emerging MOS devices the value of S is much higher than 60mv/decade (the theoretical minimum for silicon devices).