DocumentCode
2101360
Title
Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode
Author
Beling, A. ; Pan, H. ; Chen, H. ; Campbell, J.C.
Author_Institution
Univ. of Virginia, Charlottesville
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
389
Lastpage
390
Abstract
The two-tone third-order intermodulation distortions of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode with both absorbing and non-absorbing depleted region are characterized. Around 12 GHz modulation frequency, the third-order intercept point is >40 dBm over a wide range of photocurrents.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; intermodulation distortion; photodiodes; InGaAs-InP; absorbing depleted region; modified charge compensated unitraveling carrier photodiode; modulation frequency; nonabsorbing depleted region; photocurrents; third-order intercept point; two-tone third-order intermodulation distortions; Distributed feedback devices; Frequency modulation; Intermodulation distortion; Optical attenuators; Optical distortion; Optical modulation; Optical saturation; Photoconductivity; Photodiodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382442
Filename
4382442
Link To Document