DocumentCode :
2101385
Title :
Photoresponse of Ã\x9f-FeSi2 precipitates in a silicon waveguide
Author :
Sun, C.M. ; Chan, P.S. ; Tsang, H.K.
Author_Institution :
Chinese Univ. of Hong Kong, Shatin
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
391
Lastpage :
392
Abstract :
beta-FeSi2 precipitates, with a band gap of ~0.8 eV, are formed by ion implantation into a silicon-on-insulator rib waveguide. A linear photocurrent of 1 muA was obtained from a p+-i-n+ structure under 3.16 mW incident power at 1550 nm.
Keywords :
elemental semiconductors; iron compounds; optical waveguides; photoconductivity; silicon; Si; linear photocurrent; photoresponse; precipitates; silicon waveguide; Annealing; Iron; Optical waveguides; P-n junctions; Photoconductivity; Photodetectors; Photonic band gap; Silicon; Temperature; Waveguide discontinuities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382443
Filename :
4382443
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2101385
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