• DocumentCode
    2101385
  • Title

    Photoresponse of Ã\x9f-FeSi2 precipitates in a silicon waveguide

  • Author

    Sun, C.M. ; Chan, P.S. ; Tsang, H.K.

  • Author_Institution
    Chinese Univ. of Hong Kong, Shatin
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    391
  • Lastpage
    392
  • Abstract
    beta-FeSi2 precipitates, with a band gap of ~0.8 eV, are formed by ion implantation into a silicon-on-insulator rib waveguide. A linear photocurrent of 1 muA was obtained from a p+-i-n+ structure under 3.16 mW incident power at 1550 nm.
  • Keywords
    elemental semiconductors; iron compounds; optical waveguides; photoconductivity; silicon; Si; linear photocurrent; photoresponse; precipitates; silicon waveguide; Annealing; Iron; Optical waveguides; P-n junctions; Photoconductivity; Photodetectors; Photonic band gap; Silicon; Temperature; Waveguide discontinuities;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382443
  • Filename
    4382443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2101385