GaN Nanowires for Optoelectronic Devices

Single-crystal GaN nanowires have a number of unique properties that make them attractive for future optoelectronic device manufacturing. The nanowires have been shown to have low defect density, high optical output and controllable n-type conductivity. This talk will focus on nanowires that are grown by molecular beam epitaxy (MBE) without a catalyst, resulting in high crystalline purity, very low strain and very low dislocation density.