Title :
Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures
Author :
Joyce, Hannah J. ; Gao, Qiang ; Kim, Yong ; Tan, H. Hoe ; Jagadish, Chennupati
Author_Institution :
Australian Nat. Univ., Canberra
Abstract :
This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; field emission electron microscopy; gallium arsenide; indium compounds; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; transmission electron microscopy; AlGaAs; GaAs; InGaAs; MOCVD; field emission scanning electron microscopy; low temperature photoluminescence; nanowire heterostructures; optical properties; optoelectronics; room temperature microphotoluminescence; structural properties; temperature 293 K to 298 K; transmission electron microscopy; Electron emission; Electron optics; Gallium arsenide; Indium gallium arsenide; MOCVD; Nanowires; Scanning electron microscopy; Stimulated emission; Temperature; Transmission electron microscopy;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382451
