Title :
High Gain 1300 nm Quantum Dot Lasers
Author :
Passaseo, A. ; Salhi, A. ; Todaro, M.T. ; Fortunato, L. ; Tasco, V. ; De Vittorio, M.
Author_Institution :
Nat. Nanotechnol. Lab. of CNR-INFM, Lecce
Abstract :
In this work, we show that a modal gain as high as 42cm-1 could be achieved from a device containing 7 InAs/InGaAs stacked QD layers. The enhancement of the modal gain is accompanied by a decrease of the threshold and transparency current densities per QD layer down to 16 and 7 A cm-2, respectively. Moreover, a linear increase of the modal gain with the number of QD layers is observed. The obtained high modal gain allows us to achieve good temperature stability and high-speed operation in a wide temperature range. Modulation eye diagrams under 10 Gb/s are achieved in 15degC-50degC range in a single- transverse mode 1.3mum QD lasers. High characteristic temperature of about 110 K between 15degC and 85degC are reported.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; quantum dot lasers; thermal stability; InAs-InGaAs; InAs/InGaAs stacked QD layers; QD lasers; bit rate 10 Gbit/s; current densities; high-speed operation; modal gain; modulation eye diagrams; quantum dot lasers; single-transverse mode; size 1.3 mum; temperature 15 C to 50 C; temperature stability; wavelength 1300 nm; Atomic measurements; Current density; Gallium arsenide; Laser modes; Optical device fabrication; Quantum dot lasers; Quantum well lasers; Stacking; Temperature distribution; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382461