• DocumentCode
    2102135
  • Title

    The transistor: from Lillienfield to Landauer, to...? [transistor scaling limits]

  • Author

    Lundstrom, M.

  • Author_Institution
    Purdue Univ., West Lafayette, IN, USA
  • fYear
    2004
  • fDate
    21-23 June 2004
  • Abstract
    Summary form only given. This paper describes ultrasmall transistors using the conceptual picture and simulation techniques that are being developed to explain conduction in molecules. After describing a simple picture of conduction in molecules, it applies that approach to the nanoscale MOSFET and shows that it leads to a simple, but physically insightful view of the ultrasmall MOSFET. Quantum kinetic simulations are then used to examine realistic issues for "end-of-the-roadmap" MOSFETs. Next, it addresses the question of whether any transistor (e.g. Ge, InAs, carbon nanotubes, or conjugated organic molecules) can provide a significant advantage over the silicon MOSFET. The paper concludes with a brief discussion of the fundamental limits that apply to any transistor and with some thoughts on where electronic device technology is heading.
  • Keywords
    MOSFET; molecular electronics; nanoelectronics; nanotube devices; organic semiconductors; Ge; InAs; Si; carbon nanotubes; conjugated organic molecules; molecular conduction; molecular electronics; nanoscale MOSFET; quantum kinetic simulations; scaling limits; ultrasmall transistors; Integrated circuit technology; Kinetic theory; MOSFETs; Microelectronics; Molecular electronics; Moore´s Law; Nanoelectronics; Silicon; System performance; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
  • Conference_Location
    Notre Dame, IN, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-8284-6
  • Type

    conf

  • DOI
    10.1109/DRC.2004.1367755
  • Filename
    1367755