Title :
An empirical reliability prediction method for 1.55 μm InGaAs/InP MQW-DFB laser diodes
Author :
Hwang, Nam ; Kang, Seung-Goo ; Lee, Hee-Tae ; Park, Seong-Su ; Song, Min-Kyu ; Pyun, Kwang-Eui
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
An empirical method for lifetime projection of 1.55 μm InGaAs/InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser reliability; life testing; quantum well lasers; 1.55 micron; InGaAs-InP; InGaAs/InP MQW-DFB laser diode; accelerated aging test; lifetime; reliability; thermal voltage ratio; Accelerated aging; Diode lasers; Indium gallium arsenide; Indium phosphide; Prediction methods; Quantum well devices; Temperature; Testing; Thermal degradation; Voltage;
Conference_Titel :
Electronic Components and Technology Conference, 1997. Proceedings., 47th
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-3857-X
DOI :
10.1109/ECTC.1997.606338
