DocumentCode
2102159
Title
An empirical reliability prediction method for 1.55 μm InGaAs/InP MQW-DFB laser diodes
Author
Hwang, Nam ; Kang, Seung-Goo ; Lee, Hee-Tae ; Park, Seong-Su ; Song, Min-Kyu ; Pyun, Kwang-Eui
Author_Institution
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear
1997
fDate
18-21 May 1997
Firstpage
1269
Lastpage
1271
Abstract
An empirical method for lifetime projection of 1.55 μm InGaAs/InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser reliability; life testing; quantum well lasers; 1.55 micron; InGaAs-InP; InGaAs/InP MQW-DFB laser diode; accelerated aging test; lifetime; reliability; thermal voltage ratio; Accelerated aging; Diode lasers; Indium gallium arsenide; Indium phosphide; Prediction methods; Quantum well devices; Temperature; Testing; Thermal degradation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1997. Proceedings., 47th
Conference_Location
San Jose, CA
ISSN
0569-5503
Print_ISBN
0-7803-3857-X
Type
conf
DOI
10.1109/ECTC.1997.606338
Filename
606338
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