DocumentCode :
2102291
Title :
Relaxation of FN stress induced Vth shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode
Author :
Choi, Rino ; Byoung Hun Lee ; Matthews, K. ; Sim, J.H. ; Bersuker, G. ; Larson, L. ; Lee, Jack C.
fYear :
2004
fDate :
21-23 June 2004
Firstpage :
17
Abstract :
Hafnium based materials like hafnium silicate (HfSiON) have been studied intensively for replacing conventional SiO2, as gate dielectrics. In addition to dielectric breakdown and other wearout characteristics, threshold voltage shift (Vth) caused by electrical stress is one of the major reliability concerns. In this work, it has been found that a significant portion of Vth shift, induced by Fowler-Nordheim (FN) stress, is actually reversible. The origin of this Vth instability has been investigated and its implications on conventional reliability tests are discussed.
Keywords :
MOSFET; dielectric thin films; electric breakdown; hafnium compounds; semiconductor device reliability; stress relaxation; titanium compounds; Fowler-Nordheim stress relaxation; HfSiON; NMOSFET; TiN; dielectric breakdown; gate dielectrics; gate electrodes; reliability tests; reversible threshold voltage shift; stress induced threshold voltage shift; wearout characteristics; Delay effects; Dielectric materials; Electrodes; Electrons; Hafnium; MOSFETs; Stress; Testing; Threshold voltage; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367761
Filename :
1367761
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2102291
بازگشت