DocumentCode
2102300
Title
Phonon Polariton Reflectance Spectra In a Silicon Carbide Membrane Hole Array
Author
Provine, J. ; Catrysse, Peter B. ; Roper, Christopher S. ; Maboudian, Roya ; Fan, Shanhui ; Howe, Roger T.
Author_Institution
Stanford Univ., Stanford
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
466
Lastpage
467
Abstract
We report on the experimental observation of the effect of periodic hole arrays in the infrared reflection spectra of suspended polycrystalline silicon carbide (poly-SiC) membranes. The poly-SiC was deposited by low pressure chemical vapor deposition (LPCVD), patterned with contact photolithography, and etched by reactive ion etching (RIE). The spectra are shown to be strongly dependent on the pitch and aperture size of the hole arrays, indicating poly-SiC has promise as a mid-IR optical material.
Keywords
chemical vapour deposition; phonons; photolithography; polaritons; silicon compounds; sputter etching; wide band gap semiconductors; SiC; infrared reflection spectra; low pressure chemical vapor deposition; mid-IR optical material; periodic hole arrays; phonon polariton reflectance spectra; photolithography; polycrystalline silicon carbide membranes; reactive ion etching; Biomembranes; Chemical vapor deposition; Etching; Infrared spectra; Lithography; Optical arrays; Optical reflection; Phonons; Reflectivity; Silicon carbide; Nanophotonics; Optical MEMS; Phonon Polaritons; Plasmonics; Silicon Carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382481
Filename
4382481
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